Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such as contact resistance, on/off ratio, and mobility are often limited by the presence of interfacial residues caused by transfer procedures. We show an ideal residue-free transfer approach using polypropylene carbonate (PPC) with a negligible residue for monolayer MoS2. By incorporating bismuth semimetal contact with atomically clean monolayer MoS2-FET on h-BN substrate, we obtain an ultralow Ohmic contact resistance approaching the quantum limit and a record-high on/off ratio of ~1011 at 15 K. Such an ultraclean fabrication approach could be the ideal platform for high-performance electrical devices using large-area semiconducting TMDs.
A revolution in technology is on the horizon, and it's poised to change the devices that we use. Under the distinguished leadership of Professor LEE Young Hee, a team of visionary researchers from the Center for Integrated Nanostructure Physics within the Institute for Basic Science , South Korea, has unveiled a new discovery that can greatly improve the fabrication of field-effect transistors .
A major problem is the residues that occur during fabrication. Traditionally, polymethyl methacrylate is used as a supporting holder for device transfer. This material is notorious for leaving insulating residues on TMD surfaces, which often generates mechanical damage to the fragile TMD sheet during transfer.
Mr. Ashok MONDAL, the first author of the study said,"The PPC transfer method we chose enables us to fabricate centimeter-scale TMDs. Previously, TMD was limited to being produced using a stamping method, which generates flakes that are only 30-40 μm in size."
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